Tabletop thermal / plasma-assisted atomic layer deposition (ALD) device
Arradiance's tabletop ALD device can be equipped with a plasma unit despite being a tabletop model, and it is capable of film deposition not only for oxide films but also for nitrides, Pt, and Ru.
Despite being a compact tabletop ALD device, it enables atomic-level layer deposition. There is also a PEALD device equipped with a plasma unit. It can deposit on structures with a diameter of up to 200mm and a height of 25mm, as well as on carbon nanotubes (CNT) and graphene. In addition to oxide films, it also supports the deposition of nitrides and metals such as Pt and Ru. It features a 300W air-cooled direct ICP plasma head with four mass flow controlled plasma and gas inputs, and a reactor temperature adjustable up to 300°C. It includes a material supply pressurization assist function for low vapor pressure applications. The sample stage can accommodate substrates up to 200mm in diameter, and a 450°C heated stage is also available. The Arradiance GEMFlow software is user-friendly and allows for easy creation of deposition recipes. It controls all major operational parameters, including temperature, gas flow, high-speed ALD valves, RF power, and vacuum isolation. A diagnostic system and logs enable tracking of all system parameters during operation. Regarding RGIP (Reactor Gas Injection Protocol), it is equipped with a gas port monitoring interlock function.
- Company：エイチ・ティー・エル HTL（エイチティーエル）
- Price：Other
